Aluminum nitride can be sintered because it is a covalent chemical with low self diffusion coefficient and high melting points. Aluminum nitride ceramics first became commercially viable in the 1950s. These ceramics are used to refractory materials during the smelting process of pure iron, aluminium, and other aluminum alloys. The technology for preparing aluminum nitride has advanced with more research. Its application possibilities have also expanded since the 1970s. The 21st century has seen rapid developments in microelectronics technology. Electronic machine and electronic components are moving toward integration and miniaturization.
Aluminum Nitride Characteristics
AlN (hexagon wurtzite) is an aluminum nitride, a covalent bond compound made of hexagon wurtzite with the lattice parameters C =4.986 and A =3.114. The typical iii/vwide bandgap iii-vwide semiconductor material is pure aluminum nitride.
Aluminum nitride is far more efficient than alumina because it has superior performance in terms of strength, volume resistance, pressure and insulation resistance.
Thermal Conductivity Mechanism
One of the many important characteristics of aluminum Nitride is its excellent thermal conductivity. There has been a great deal of work on the thermal conductivity mechanism in aluminum nitride. The theoretical framework is almost perfect. It is heat transfer by lattice (or lattice vibration), that acts as the primary mechanism. According to quantum mechanics, lattice waves are the motion of the particle, or the phonon. The wave-particle duality of thermal waves is also present. Through mutual restriction of and coordination among vibrations between structural elements (atoms ions or molecules), thermal phonons can transfer heat. A crystal with an ideal structure and non-elastic crystals can allow heat to flow freely between the hot and cold ends of the crystal without interfering or scattering. The thermal conductivity may reach very high levels. Phonon scattering and crystal defects are major factors in controlling the thermal conductivity.
AlN has a theoretical thermal conductivity value of 320W*m-1*K-1. However, the thermal conductivity actually measured by AlN is 200W*m-1*k-1. This can be due to defects and impurities. The reason is that the distribution of structural elements within the crystal does not have to be uniform and therefore there will always be different dense and sparse regions. This means the current-carrying and propagation phonons are constantly scattered.
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